ERI: Understanding and Harnessing Exciton Polaritons for High-Performance 2D Heterostructure Optoelectronic Devices

Nontechnical description: This project will study a new approach to improving the light-detecting performance of optoelectronic devices by using special hybrid light-matter waves called exciton-polaritons. These waves can carry optical energy across ultrathin materials over much longer distances than ordinary excitations, creating opportunities for devices that detect light more efficiently, respond more rapidly, and even sense light away from the main active region. The research will focus on atomically thin two-dimensional (2D) semiconductor materials, which are promising building blocks for next-generation photodetectors, on-chip optical communication systems, and advanced sensing technologies. By revealing how these hybrid waves move and deliver energy within 2D nanoscale devices, the project could open new pathways for compact, high-performance optoelectronic technologies important to future communications, sensing, and semiconductor innovation. The project will support education and workforce development in optics, nanotechnology, and quantum materials. Research outcome will be incorporated into university coursework and outreach activities, including engagement with K-12 students and teachers. Undergraduate and graduate students will receive hands-on training in nanomaterial fabrication, optical measurements, nano-imaging, and device characterization, helping prepare a skilled STEM workforce in emerging areas of semiconductor and quantum technologies. Technical description: Exciton-polaritons are hybrid quasiparticles formed by the strong coupling of excitons with photons, offer unique opportunities for advancing optoelectronic devices through long-range, low-loss energy transport. This project will investigate how exciton-polaritons influence the performance of 2D semiconductor optoelectronic devices. To accomplish this goal, the project will establish an in-situ platform that integrates near-field imaging with electrical measurements, enabling direct excitation, visualization, and analysis of exciton-polariton propagation while simultaneously monitoring device response. This approach will provide a direct experimental method for investigating how exciton-polaritons' excitation and transport influence the optical and electrical characteristics of 2D devices. This project will offer valuable insight into the interaction between excitonic and polaritonic channels within 2D optoelectronic devices. The knowledge gained will be used to develop strategies for controlling and harnessing exciton-polaritons to enable advanced functionalities such as enhanced responsivity, efficient energy delivery, and remote photodetection. The outcomes of this research will provide fundamental insight into polaritonic transport in semiconductor devices and establish design principles for future polariton-enabled optoelectronic and photonic technologies. This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria. NSF Award ID: 2552941 | Program: 01002627DB NSF RESEARCH & RELATED ACTIVIT | Principal Investigator: Mingyuan Chen | Institution: South Dakota School of Mines and Technology, RAPID CITY, SD | Award Amount: $200,000 View on NSF Award Search: https://www.nsf.gov/awardsearch/show-award/?AWD_ID=2552941 View on Research.gov: https://www.research.gov/awardapi-service/v1/awards/2552941.html