CAREER: Aggregated WBG Multi-Chip Power Module for High-Voltage Conversion
National Science FoundationDescription
This NSF CAREER project aims to overcome critical barriers limiting the deployment of wide bandgap (WBG) semiconductors in medium to high voltage power conversion that support the modern electric grid. Rapid growth in electricity demand, driven by artificial intelligence infrastructure and transportation electrification, requires more efficient and compact power conversion technologies. However, existing high voltage (>10 kV) WBG modules remain immature and offer limited current capability, restricting practical adoption. This project introduces a transformative Aggregated WBG Multi-Chip (AWMC) module paradigm that combines mature, lower-voltage chips in series and parallel to achieve both high voltage and high current in a scalable, cost-effective manner. By integrating advanced control, innovative circuitry, and new packaging architectures, the project ensures reliable operation under extreme electrical and thermal stress. The intellectual merit of the project includes: 1) a systematic framework for simultaneous voltage, current, and thermal balancing in multi-chip high voltage modules; 2) an active gate driving scheme with integrated sensing and real-time balancing control; and 3) a scalable packaging architecture featuring symmetric gate paths, integrated control circuitry, and reduced parasitics and partial discharge risk. The broader impacts of the project include accelerating the transition from legacy silicon-based systems to efficient WBG infrastructure, supporting grid modernization and domestic manufacturing, and preparing a highly skilled workforce through interdisciplinary education, open-access design tools, and outreach to K–12 and university students. To advance WBG adoption in high voltage power conversion, the project develops AWMC modules formed by series–parallel interconnection of mature WBG chips to achieve high current (>100 A) capability, scalable to high voltage (>10 kV) operation. Realizing this vision requires addressing three fundamental challenges: achieving simultaneous voltage, current, and thermal balancing (SVCTB); overcoming the incompatibility of conventional silicon-based packaging with multi-chip high-voltage WBG modules; and establishing modeling and design methodologies for large-scale AWMC modules. The research program is organized around three synergistic thrusts: 1) Develop fundamental understanding of SVCTB mechanisms in multi-chip interconnections; 2) Design and validate real-time SVCTB control strategies using active gate driving and integrated sensing; and 3) Establish a reliable, scalable packaging architecture and systematic design methodology for high voltage, high current WBG modules. Educational objectives include establishing a multidisciplinary training platform spanning semiconductor devices, packaging, and power electronics systems; developing an open-access high-voltage module packaging design tool; and building a STEM pathway from pre-college to graduate education to cultivate the next generation of power electronics engineers. This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria. NSF Award ID: 2544160 | Program: 01002627DB NSF RESEARCH & RELATED ACTIVIT | Principal Investigator: Xiaoqing Song | Institution: University of Arkansas, FAYETTEVILLE, AR | Award Amount: $500,000 View on NSF Award Search: https://www.nsf.gov/awardsearch/show-award/?AWD_ID=2544160 View on Research.gov: https://www.research.gov/awardapi-service/v1/awards/2544160.html
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Grant Details
$500,000 - $500,000
March 31, 2031
FAYETTEVILLE, AR
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